EMP

Radiation emittance, particularly in the form of electromagnetic pulses (EMP), high-energy cosmic rays, and intense ionizing radiation, can severely damage or destroy electronic systems through several distinct physical mechanisms:

  • Single-Event Effects (SEE): High-energy particles (like protons or neutrons) strike sensitive semiconductor junctions, creating a localized charge track that can trigger a Single-Event Upset (bit flip in memory), a Single-Event Latchup (causing a short circuit and device lockup), or permanent Single-Event Burnout in power transistors.
  • Total Ionizing Dose (TID): Long-term exposure to gamma rays or X-rays traps positive charges within the insulating layers (such as silicon dioxide) of metal-oxide-semiconductor (MOS) devices, degrading threshold voltages and eventually rendering transistors non-functional.
  • Electromagnetic Interference (EMI) / EMP Coupling: High-intensity electromagnetic waves induce massive voltage and current surges across conductive traces, antennas, and wiring harnesses. These transient spikes vastly exceed the breakdown voltage of integrated circuits, instantly frying microprocessors, diodes, and power management ICs.
  • Thermal Overload: Intense bursts of directed energy radiation (such as microwaves or laser energy) rapidly heat metallic interconnects and semiconductor substrates, causing microscopic melting, delamination, or explosive vaporization of circuit paths.

Hardening electronics against these effects typically requires specialized shielding (such as Faraday cages), radiation-tolerant semiconductor manufacturing processes (Silicon-on-Insulator), and redundant circuit design.


FOR EXAMPLE~

1) Wireless and Bluetooth Keyboard
2) Wireless and Bluetooth Mouse
3) Phone/TAB Charger
4) Electric Fan

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